IXFH26N60Q Manu:IXYS Encapsulation:TO-247,HiPerFETTM Power MOSFETs Q-Class
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IXFH26N60Q IXYS Encapsulation:TO-247,HiPerFETTM Power MOSFETs Q-Class
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:360W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; Avalanche Single Pulse Energy Eas:1.5J; Current Id Max:26A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:150nC; No. of Transistors:1; On State Resistance Max:250mohm; Package / Case:TO-247; Power Dissipation Pd:360W; Power Dissipation Pd:360W; Pulse Current Idm:104A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:45mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Weight:6g
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